HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
Quarterly rept. no. 5, 1 July-30 Sep 63.
WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
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Results of recent device evaluation indicate that silicon material remains the major problem. Large diameter crystals 1.25 in. yielded poor results it is therefore necessary to return to the smaller diameter 1.125 in. material. The problems of high voltage yield and dvdt adjustment are examined with respect to design and fabrication process. Results of devices fabricated on 1.250 in. crystal are reviewed. Electrical characteristics as required by the contract are reviewed and analyzed with respect to probable device appliecation. It may be desirable to emphasize some specific characteristics at the expense of others to maximize the usefulness of the device in applications. Author