Accession Number:

AD0435146

Title:

ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.

Descriptive Note:

Interim engineering rept. no. 3, 1 Mar-31 May 63.

Corporate Author:

HP ASSOCIATES PALO ALTO CALIF

Personal Author(s):

Report Date:

1963-05-31

Pagination or Media Count:

113.0

Abstract:

The exploration of electro-optical effects in S I is described. Difficulties were encodntered in determining the optical absorption edge shift with electrical field. The response time of npn planar Si phototransistors was reduced to less than 1 microsec. In a search for photoconductors responsive to GaAs radiation, attention was given the Cd sub 1-x Hg sub x Se system. The work on GaAs diodes concerned zinc diffused pn junctions using both moderately and degnenerately n-type doped GaAs, as well as sulfur diffused pn junctions using cadmium doped GaAs. A major advance in the understanding of the mechanism of GaAs injection electroluminescence pinpointed the loss of efficiency at room temperature to be only apparent. It was found that a spectral shift increases a hundred-fold the absorption coefficient and thus contributes to enhance selfabsorption. Optoelectric amplifiers having a current gain in excess of unity and response time of about 300 ns were constructed. All of the material synthesis and crystal growth is described. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE