Accession Number:

AD0434756

Title:

EPITAXIAL VAPOR GROWTH OF III-V COMPOUNDS.

Descriptive Note:

Interim rept. Oct 61-Aug 63,

Corporate Author:

STANFORD UNIV CALIF STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1963-10-01

Pagination or Media Count:

52.0

Abstract:

This work describes an open-tube method for epitaxial growth of III-V compounds using heterogeneous, gas-solid chemical reactions. Different techniques and reactions are briefly discussed and a simplified model is exposed to a thermodynamic treatment to clarify how different parameters influence the growth process. The experimental apparatus and procedure are outlined and data are given for the growth of the two compound semiconductors, GaAs and GaP, as well as for the ternary GaAsxP1-x mixtures. Also mentioned is the fabrication of heterojunctions, the possibilities of doping, and closed-tube growth processes. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE