Accession Number:

AD0434747

Title:

HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.

Descriptive Note:

Quarterly progress rept. no. 8, 1 Oct-30 Dec 63,

Corporate Author:

MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s):

Report Date:

1964-03-01

Pagination or Media Count:

30.0

Abstract:

The general properties of the transmission phase shifter circuit mode are described, and analytic relationships are quoted which may be used for calculating phase shift and transmission match. A geometric description of both transmission phase states of the circuit is developed and used to define the accuracy of a convenient approximate formula for phase shift calculations. The results of an S-band experimental diode phase shifter yielding O to 22 degree phase shift in two 11 degree steps and having a peak RF burnout power capability of 37 kilowatts at 1 microsecond pulse length and 0.001 duty cycle are described in detail. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE