HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.
Quarterly progress rept. no. 8, 1 Oct-30 Dec 63,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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The general properties of the transmission phase shifter circuit mode are described, and analytic relationships are quoted which may be used for calculating phase shift and transmission match. A geometric description of both transmission phase states of the circuit is developed and used to define the accuracy of a convenient approximate formula for phase shift calculations. The results of an S-band experimental diode phase shifter yielding O to 22 degree phase shift in two 11 degree steps and having a peak RF burnout power capability of 37 kilowatts at 1 microsecond pulse length and 0.001 duty cycle are described in detail. Author