TRANSISTOR, VHF, SILICON, POWER (10W-500MC).
Quarterly rept. no. 1, 1 July-30 Sep 63,
TRW SEMICONDUCTORS INC LAWNDALE CALIF
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In thisreport a design is derived which will assure an output power of 10 watts at a frequency of 500 megacycles and a collector voltage of 28 volts. This design is an annulus of centerline radius 44.6 mils and width of 4 mils. The device will employ diffusions designed to pro duce a 0.4 micron base width and will be contained in a minimum inductance package such as the Disc-Power-Strap Package discussed Paragraph 1.4 of Section III. Author