FIELD EFFECT + SPACE-CHARGE-LIMITED THIN FILM TRIODES.
Quarterly rept. no. 2, 1 Oct-31 Dec 63,
RADIO CORP OF AMERICA CAMDEN NJ DEFENSE ELECTRONIC PRODUCTS
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Work was performed on thin-film transistors of the field effect type, both from a device viewpoint and from a materials aspect. Emphasis was placed on an intensive study of the shelf and operating lives of CdS thin-film transistors, with a view toward isolating and identifying the failure mechanisms and the technological factors contributing to the failure. Author