DEVELOPMENT OF A LOW-NOISE MILLIMETER-WAVE PARAMETRIC AMPLIFIER.
Quarterly progress rept. no. 2, 1 Oct 631 Jan 64,
CONTROL DATA CORP MELVILLE N Y TRG DIV
Pagination or Media Count:
The theoretical values of optimum noise temperature and gain-bandwidth product for a one-port non-degenerate parametric amplifier are derived under completely general conditions. A set of universal design curves showing the noise temperature and gain-bandwidth product as functions of the ratio of signal and idler frequencies with the ratio of the diode figure of merit and the signal frequency as a parameter are included. Measurements taken on the epitaxial Ga As junctions, packaged in ceramic cartridges, indicate that the self-resonant frequency of this configuration is too low for use in a 94-Gc amplifier. Various mounting configurations for the unpackaged junction are being evaluated. Author