Accession Number:

AD0432897

Title:

TRANSPORT PROPERTIES AND BAND STRUCTURE OF GRAY TIN,

Descriptive Note:

Technical rept. no. HP10

Corporate Author:

HARVARD UNIV CAMBRIDGE MASS GORDON MCKAY LAB

Personal Author(s):

Report Date:

1963-12-01

Pagination or Media Count:

147.0

Abstract:

This report describes an experimental investigation of the dependence of the electrica3 conductivity and Hall coefficient of gray tin on pressure and temperature. An empirical rdle for pressure coefficients has been found from previous studies on many of the group IV and group III - group V semiconductors the pressure coefficient of a particular energy gap depends on the symmetry of the electron staces involved but varies little from mate9ial to 4acerial. By assuming that this rule includes gray tin, it is possible to suggest a new model for the band structure. This model can be constructed from the more familiar semiconduct6r band structure if the energy gap is systematically extrapolated from CdTe and InSb to gray tin. The proposed medel is compatible with the results of ther experiments. Other models of the band structure are discussed and it is shown that the behavior predicted from them is often in poor agreement with the experimental results. Finally, it is suggested that the proposed band structure may apply to some other materials. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE