RESEARCH ON SEMICONDUCTOR TRANSPORT.
Final rept., 1 June 59-31 Jan 64,
CLEVITE TRANSISTOR PALO ALTO CA SHOCKLEY TRANSISTOR DIV
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Transmitted phonon drag is used to study different scattering phenomena in silicon. The mean free path of the relevant thermal phonons is measured at 4.2 K in diffused npn silicon structures. At this temperature the mean free path is found to be 5000 1000 microns. A comparison is made between values obtained from crucible grown and epitaxial silicon. Both crystal materials with equivalent doping levels yield the same free path at 77 K. The transmitted phonon drag is proposed as a tool to study acoustic amplification of relevant thermal phonons in silicon at 77 K. These phonons have a frequency of 10 to the 12th power cps. It is shown that such high frequency phonons can interact very strongly with charge carriers via the deformation type coupling present in silicon. The fabrication of diffused 5 layer npn-pn silicon structures suitable for the amplification experiments is described. Author