PRODUCTION RELIABILITY IMPROVEMENT PROGRAM FOR GERMANIUN TRANSISTOR 2N1430.
Final rept. 30 Apr 62-31 Oct 63,
BENDIX CORP HOLMDEL N J BENDIX SEMICONDUCTOR DIV
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This Production Engineering Measure has established the capability of manufacturing an improved version of the 2N1430 Germanium Diffused Alloy Power Transistor with very satisfactory yields. The improved techniques have resulted in a reliable product which satisfies the objective failure rate of 0.051000 hours with 90 confidence. The estimate of failure rate after incorporation of the various production improvements was less than 0.011000 hours. All required samples have been delivered, all production equipment modifications completed and appropriate quality and reliability testing performed to demonstrate the success of the operation. Author