ENGINEERING SERVICES ON TRANSISTORS.
Quarterly progress repts. no. 2 and 3, 1 July30 Sep 63,
BELL TELEPHONE LABS INC WHIPPANY N J
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Efforts were continued on studies and investigations related to transistors and transistorlike devices, with a view toward demonstrating and increasing the practicability of their use in operating equipment. A discussion is given of work on a 1-Gc, 1-watt germanium transistor and a 6-Gc low-power germanium transistor and integrated circuit devices. The status of the work on the germanium microwave transistors is discussed. Techniques and problems related to the oxide-photoengraved planar transistor structure fabrication are covered. A new method of determining emitter depletion layer capacitance is described and experimental results given. Results of a calculation of effective mobility and diffusion coefficient for electrons and holes in germanium are given which will permit more accurate estimates of base transit time and base resistance of high-frequency transistors. The integration of a small part of a high-speed general purpose military computer is described. DCTL was used and 4- to 5-ns propogation delay was obtained. Author