SELECTED EXPERIMENTS IN SILICON INTEGRATED DEVICE TECHNOLOGY.
Rept. for Jan 63-Feb 64,
RESEARCH TRIANGLE INST DURHAM N C
Pagination or Media Count:
The experimental work that was performed as supplementary investigation to the preparation of the Silicon Integrated Device Technology series is presented. In addition to the five volumes of this series that were compiled, supporting experimental work was done in three areas 1 anodic oxidation of silicon for integrated circuits 2 statistical methods for the evaluation of laboratory processes, steam oxidation of silicon was the process considered initially and 3 impurity diffusion into silicon from a gas source. Phosphine gas was the first impurity gas investigated. Author