Accession Number:

AD0432139

Title:

INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.

Descriptive Note:

Quarterly progress rept. no. 2, 16 Feb-15 May 63,

Corporate Author:

MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s):

Report Date:

1963-05-15

Pagination or Media Count:

49.0

Abstract:

Cleanup and thermal recovery of inert gases at the interface between a high power microwave discharge and a quartz surface have been further investigated. Argon, krypton and helium appear to have comparable cleanup characteristics. Neon reveals the fastest cleanup rate and xenon does not appear to cleanup in the long term. In all cases the number of atoms sorbed while the discharge was on was observed to be proportional to the square root of time. Rapid and complete recovery of the trapped gas is observed following cleanup at low ambient temperatures. Recovery following cleanup at high ambient temperatures is characterized by a much slower desorption which is linear with the square root of time. Analysis of the data indicates that cleanup and recovery are controlled by activated diffusion. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE