ACTIVE THIN FILM TECHNIQUES MICROMIN PROGRAM.
Interim development report no. 6, 1 Nov 6331 Jan 64,
SYLVANIA ELECTRIC PRODUCTS INC WALTHAM MASS
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An investigation was made for developing a process for depositing device-quality silicon andor germanium films on glazed polycrystalline insulating substrates by vacuum evaporation of silicon andor germanium and to form thin film diodes and transistors in these films. The silicon depositions were carried out for the control of n-type doping, Hall measurements, improvement of crystallinity by annealing and by electron beam heating, and fabrication of improved diodes and transistors. Diodes with ohmic contacts were made with reverse breakdowns of 15 to 60 volts. The apparatus for Hall and resistivity measurements was improved, resulting in reliable and reproducible data on mobilities and carrier concentrations. The patterns for the Hall resistivity silicon deposition mask and the photoresist mask were changed so that both resistivity and Hall measurements could be made in a single operation. Improved crystalline quality in silicon thin films has been obtained through high temperature annealing. Initial vacuum deposited films exhibited increased grain size and Laue spots. Author