PREPARATION OF SUBSTRATE FOR EPITAXIAL GROWTH. VOLUME II. SECTION III. TASK 2.
Final rept., 1 May 62-31 Oct 63.
FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV
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Research concerned the establishment of a pro duction engineering measure for improvement of production techniques for the 2N914 and 2N995 silicon planar epitaxial transistors. This volume presents results of the preparation of substrate for epitaxial growth, header plating particle elimination and aluminum deposition phases of the program. Final operating specifications and production data are presented along with a summary of the work performed. Vol. I is AD429 420. Author