PRODUCTION ENGINEERING MEASURE 2N914 AND 2N995, VOLUME I.
Final rept., 1 May 62-31 Oct 63,
FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF FAIRCHILD SEMICONDUCTOR DIV
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Efforts concerned the establishement of a production engineering measure for improvement of production techniques to increase the relia bility of 2N914 and 2N995 silicon planar epitaxial transistors. Processes improved included Lead attachment Preparation of substrate for epitaxial growth Header plating Particle elimination and Aluminum deposition. This volume presents the results of the lead attachment improvement phase of the program. The change in metal systems, small ball bonding, wire study, ultrasonic bonding and dynamic and step stress testing. Vol. II is AD429 921. Author