500 WATT SILICON POWER TRANSISTOR.
Quarterly rept. no. 1, 31 July-30 Oct 63.
WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
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A method of testing power transistors for secondary breakdown behavior is described. Test results obtained on transistors manufactured by several different processes are discussed. It was found that secondary breakdown occurs in the collectorbase connection as well as in the collectoremitter mode. Test results are analyzed in terms of junction breakdown, avalanche-limited and punch-through limited transistor breakdown, and thermal runaway. Approaches to design of the subject transistor are evolved from consideration of test results. Author