TRANSISTORS, TRIODE, SILICON, PNP SWITCHING.
Quarterly rept. no. 2, 1 July-30 Sep 63,
TEXAS INSTRUMENTS INC DALLAS
Pagination or Media Count:
Research was continued on the development of a PNP, high speed, silicon switching transistor. Using the small geometry 1.96 mils sq. base area, a turn-on time of less than 10 nanoseconds and a turn-off time of less than 20 nanoseconds were achieved. The reduction of storage time by the use of gold doping is discussed. Saturation voltage is a major problem, but the data indicate possible improvements. Leakage currents are discussed and it is shown that use of a guard ring reduces these currents considerably. Slice preparation, diffusion and contact techniques are examined in detail and conclusions are stated. The design of material specifications is described and the effect upon the device parameter is indicated. Author