HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.
Quarterly progress rept. no. 7, 1 July-30 Sep 63,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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Efforts were continued on the development of high power semiconcuctor phase shifting devices. The uses of transmission phase shifters using diodes as active control elements are discussed, and the description and characteristics of this circuit configuration are noted in general terms. Progress made within the last study interval is reported. This includes the construction of an 8-section 1300 mc phase shifter operated to peak power levels of 140 KW and a 3000 mc, 8-section phase shifter yielding up to 15 KW peak power capability and 0 degrees to 180 degrees phase shift in 22 12 degree steps and 0.9 db total insertion loss. Author