Accession Number:

AD0425795

Title:

COMPATIBLE ACTIVE THIN-FILM INTEGRATED STRUCTURES.

Descriptive Note:

Interim scientific rept. no. 1, 15 June15 Oct 63,

Corporate Author:

RCA LABS PRINCETON N J

Personal Author(s):

Report Date:

1963-11-15

Pagination or Media Count:

27.0

Abstract:

A literature survey is given covering work in the fields of theory of silicon growth, growth of silicon from the vapor phase, evaporation, and thin-film silicon devices. This report is concerned essentially with the first steps in the development of a thin-film integrated circuit, namely the development of the semiconductor substrate and the active device. Two methods of forming the substrate are being investigated evaporation and pyrolysis. The evaporation technique is of interest because it is readily integrated with other production methods. After studying several methods of evaporating, direct electron-beam bombardment of silicon was adopted. Preliminary tests were made on polished quartz substrates. Best results were achieved at temperatures of 1100 C for which mobilities of 1 to 5 cmvolt-sec were measured. A flow system for the pyrolysis of silane was set up along with the desirable doping supplies and tested by growing epitaxially on silicon. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE