PRODUCTION ENGINEERING MEASURE TYPE 2N1016B SILICON ALLOY TRANSISTOR.
Quarterly progress rept. no. 4, 1 Apr-30 June 63,
WESTINGHOUSE ELECTRIC CORP PHILADELPHIA PA
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Furter progress is reported on the improvement of reliability of silicon alloy power transistors, particularly the Type 2N1016B, through the incorporation of various improvements in device fabrication. No changes in the basic device structure are planned. Rather, the planned improvements are aimed at increased device perfection through incorporation of new, more controllable processing techniques, redesign of some components of the encapsulation, and improved control of surface condition and stability. These modifications are expected to improve reliability by leading to more uniform device structures, current flow and heat flow, and to greater long-term chemical stability of the active element. In support of the process improvement program, a reliability evaluation program utilizing high temperature storage step-stress testing is being undertaken. This program will be used to evaluate reliability of the transistors, before incorporation of any improvements, and after incorporation of all improvements. Individual improvements will be evaluated by test procedures aimed at the specific improvement under investigation. Author