Accession Number:

AD0425523

Title:

INVESTIGATION OF HOT ELECTRON EMITTER.

Descriptive Note:

Scientific rept. no. 5, 1 June-31 Aug 63.

Corporate Author:

HP ASSOCIATES PALO ALTO CALIF

Personal Author(s):

Report Date:

1963-08-31

Pagination or Media Count:

29.0

Abstract:

A newtype of cadmium sulfide evaporation source in which the rate is diffusion limited is discussed. Typical thickness versus time and rate versus temperature dependences are presented and the rate is found to be dependent only on source temperature. Spectrochemical analysis of the films indicate that the film dopant concentration is approximately 20 of the source concentration. This measurement is verified by electrical measurements on the films. A discussion of possible advantages of evaporating CdSe instead of CdS for a triodd collector is presented. The capacity-voltage and currentvoltage of a gold to cadmium selenide barrier are presented and the internal barrier height is found to be 0.82 ev, which is compatible with a gallium arsenide emitter. Further data is presented for the reverse leakage mechanism of image force lowering of the barrier. The data supports the contention that the infrared frequency value of semiconductor permittivity, viz. 12 for Si, should be used for barrier lowering calculations. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE