FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.
Quarterly rept. no. 2,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
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Presented are investigations of two failure mechanisms 1 second breakdown in silicon power transistors, and 2 studies of electrical charge on oxides protecting reverse biased silicon p-n junctions. The relationship between hot spots and second breakdown is investigated. Many transistors exhibit second breakdown in a region where there was local heating already at power levels insufficient for second breakdown. Other transistors, however, show no such correlation second breakdown occurs at spots which initially showed no heating. This second breakdown seems to be initiated through some defect which is, as yet, unknown. The surface studies verified the Atalla-model of charge separation on oxides covering reverse biased junctions. Surface potential measurements indicate that voltages as high as 50 of the applied bias remain across the oxide immediately after bias removal. The buildup and decay of these voltages depends strongly upon surface treatment. Author