HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
Quarterly rept. no. 4, 1 Apr-30 June 63.
WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
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Results of recent device evaluation indicates that, though silicon material to date has been adequate, there remains the need to monitor crystal sources to be assured of sufficient supply to meet contract commitments. The unique CBE Compression Bonded Encapsulation approach to device packaging is described. Data of state-ofart samples delivered to the Navy Department are reported. They indicate the basic device design and its encapsulation to be appropriate to the present stage of the development program. It is noted that modifications are necessary to improve the yield of devices which are in-spec for all electrical characteristics. Author