TRANSISTOR DESIGN EFFECTS ON RADIATION RESISTANCE.
Quarterly rept. no. 1, 15 June-15 Sep 63.
HUGHES AIRCRAFT CO NEWPORT BEACH CALIF
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An evaluation is presented of materials suitable for transistor fabrication. Crystals were grown which contained the levels and types of dopants approximating the base and the collector materials. The crystals were cut into bars and irradiated with short, high-intensity pulses from the Linac. Because of the low resistivity of the base materials, gamma radiation did not produce a measurable response. It was therefore decided to subject all test specimens to 5 microsecond bursts of direct electron radiation. The peak changes in conductivity cause by electron-hole generation are compared. The response to radiation is largely a function of minority carrier lifetime. The gold-doped specimens had about onetenth the response of those without gold doping. An appreciable difference between the arsenic and phosphorous doped crystals is apparent from the data obtained although how significant this difference is with respect to radiation resistance is not known in view of the higher lifetime of the arsenic crystals, the lack of data on mobility changes, and the estimated error incurred in the Linac readings. Author