THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS.
Quarterly progress rept. no. 1, 31 May-31 Aug 63,
TEXAS INSTRUMENTS INC DALLAS
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Satisfactory sputtering conditions have been established for tantalum oxide with sheet resistances in the range of several hundred to several thousand ohms per square. This is accomplished by controlling the oxygen partial pressure in the 10 to the -5th power torr range during sputtering. The measured sheet resistances indicate that more control needs to be exercised on incoming gas conditions. Ultra thin films of molybdenum and tantalum have been successfully deposited on high temperature substrates for resistors and exhibit excellent stability of 125 C storage. The sheet resistance can be altered over an order of magnitude while the TCR remains less than 200 PPMC. Author