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ESR AND OPTICAL EXPERIMENTS ON DEEP-LYING IMPURITIES IN GERMANIUM AND SILICON,
HARVARD UNIV CAMBRIDGE MA GORDON MCKAY LAB
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This report describes combined infra-red absorption and electron spin resonance experiments on deep-lying impurities in silicon and germanium. By monitoring the electron spin resonance signal of an impurity while simultaneously illuminating the sample with monochromatic infra-red radiation, ionization and trapping processes which change the impurity population are detected. The results of this measurement are then compared with photoconductive response and Hall effect data on the same crystal. Experimental results on iron, chromium and sulfur impurities in silicon and nickel in germanium are presented and discussed in terms of the ionization energies of the impurities and the photoexcitation processes. Author
APPROVED FOR PUBLIC RELEASE