Accession Number:

AD0423329

Title:

ESR AND OPTICAL EXPERIMENTS ON DEEP-LYING IMPURITIES IN GERMANIUM AND SILICON,

Descriptive Note:

Corporate Author:

HARVARD UNIV CAMBRIDGE MA GORDON MCKAY LAB

Personal Author(s):

• Kravitz, Lawrence C.

Report Date:

1963-06-14

Pagination or Media Count:

1.0

Abstract:

This report describes combined infra-red absorption and electron spin resonance experiments on deep-lying impurities in silicon and germanium. By monitoring the electron spin resonance signal of an impurity while simultaneously illuminating the sample with monochromatic infra-red radiation, ionization and trapping processes which change the impurity population are detected. The results of this measurement are then compared with photoconductive response and Hall effect data on the same crystal. Experimental results on iron, chromium and sulfur impurities in silicon and nickel in germanium are presented and discussed in terms of the ionization energies of the impurities and the photoexcitation processes. Author

Descriptors:

• *GERMANIUM
• *SILICON
• NUCLEAR RESONANCE
• MONOCHROMATIC LIGHT
• IONIZATION
• HALL EFFECT
• PHOTOCONDUCTIVITY
• CRYSTAL DEFECTS
• ATOMIC ENERGY LEVELS
• CHROMIUM
• IRON
• SULFUR
• NICKEL

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE