RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR JUNCTION MIXER DIODES FOR COUNTERMEASURES EQUIPMENT.
Interim engineering rept. no. 1, 26 June30 Sep 63.
PHILCO CORP LANSDALE PA
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Research concerns the development of X-band mixer diodes for application to countermeasures equipment. Comparison is made between the new diode design a microplanar germanium backward tunnel diode and the state-of-the-art as represented by the L4153 backward tunnel mixer diode. Significant improvements are indicated in conversion loss and resistance to burnout. Correlation is shown with a power transfer figure-of-merit primarily dependent on series resistance and junction capacitance. On the basis of the new design and the figure of merit an improvement of more than 3 db in Lc is indicated. Burnout resistance of 20 ergs is predicted by the new design. The use of vapor deposited oxide as a mask to delineate the junction is described, as is that of aluminum as a high temperature junction forming material. Waveguide, package and mount considerations indicate that the combination of WR102 waveguide and a low inductance ceramic package with a waveguide-to-coax transition is the most favorable approach to achieve rf independence matching over the specified range of 7 to 11 gc. Author