DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD0423264
Title:
RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR JUNCTION MIXER DIODES FOR COUNTERMEASURES EQUIPMENT.
Descriptive Note:
Interim engineering rept. no. 1, 26 June30 Sep 63.
Corporate Author:
PHILCO CORP LANSDALE PA
Report Date:
1963-09-30
Pagination or Media Count:
1.0
Abstract:
Research concerns the development of X-band mixer diodes for application to countermeasures equipment. Comparison is made between the new diode design a microplanar germanium backward tunnel diode and the state-of-the-art as represented by the L4153 backward tunnel mixer diode. Significant improvements are indicated in conversion loss and resistance to burnout. Correlation is shown with a power transfer figure-of-merit primarily dependent on series resistance and junction capacitance. On the basis of the new design and the figure of merit an improvement of more than 3 db in Lc is indicated. Burnout resistance of 20 ergs is predicted by the new design. The use of vapor deposited oxide as a mask to delineate the junction is described, as is that of aluminum as a high temperature junction forming material. Waveguide, package and mount considerations indicate that the combination of WR102 waveguide and a low inductance ceramic package with a waveguide-to-coax transition is the most favorable approach to achieve rf independence matching over the specified range of 7 to 11 gc. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE