PRODUCTION ENGINEERING MEASURE ON 2N1708 SILICON PLANMAR EPITAXIAL TRANSISTOR.
Quarterly rept. no. 5, 1 May-30 July 63,
RADIO CORP OF AMERICA SOMERVILLE N J
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Efforts continued on reliability testing and analysis and device processing modification. A production run has been initiated to demonstrate the reliability achieved as a result of the process improvements which had been implemented. The life test results obtained to date are included. A preliminary evaluation of the improved reliability is provided. The failure analysis procedure followed during the program is described. The results of failure analysis on both high temperature storage and operating life are given. A comparison is made between the failure mechanisms on product produced prior to and during the initial phase of the production run. An acceleration curve for high temperature storage life tests has been established. However, acceleration curves for operating life tests and a correlation between operating and storage life tests has not been established. Preliminary work leading to further studies in this area is reviewed. The results of mechanical and environmental tests are presented. A study of variables data before and after testing is included. Author