Accession Number:

AD0422697

Title:

ELECTRICAL IONIZATION PHENOMENON IN GOLD-DOPED SILICON,

Descriptive Note:

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1963-10-01

Pagination or Media Count:

81.0

Abstract:

An electrical breakdown phenomenon in heavily gold-doped silicon has been observed. The samples prepared with the proper ohmic end contacts exhibit linear current-voltage relationships at low fields, followed by a slight saturation in current only in some samples. Then at some critical electric field, a sharp increase in current density more than one order of magnitude occurs. Some of the samples also exhibit negative incremental resistance at high values of the current density. This phenomenon is readily seen at room temperature in n-type samples, and at dry-ice temperatures in p-type samples. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE