THERMOELECTRIC JUNCTIONING PROJECT.
Progress rept. no. 4, 1 Jan-31 Mar 63,
WHIRLPOOL CORP ST JOSEPH MICH
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Several X-ray diffraction patterns of as-received and abraded thermoelectric materials were run. No evidence of crystalline film or deposits was noted. The cathodic etch apparatus was further improved to the point where surface stripping is extremely controllable. Evaluation of junction resistance scanner data shows the apparatus measures surface effect at a junction and will not produce an average junction resistance. Assuming a gas monolayer may be present on the element surface and reinforced by aqueous fluxes, a nonaqueous molten SnC12 flux was used and found to produce excellent tinning characteristics. Success was also attained with the same flux and bismuth-antimony solder which has a melting point of approximately 525 F. Reaction tests on materials have shown diffusion zones on soldered p and n type grown or sintered material is approximately equal, however, p type material shows a reaction rate well in excess of the n type material. Author