Accession Number:

AD0422561

Title:

PHOTOELECTRIC MILLIMETER WAVE DETECTOR,

Descriptive Note:

Corporate Author:

RAYTHEON CO BURLINGTON MASS

Personal Author(s):

Report Date:

1963-10-01

Pagination or Media Count:

14.0

Abstract:

Presented is the application of semiconducting materials to the problem of detection of electromagnetic radiation in the millimeter and submillimeter wavelength range. The method of approach involves the use of the internal photoelectric effect i.e. photoconductivity in certain semiconductor materials at very low temperatures. The program can be broken down into four main phases a. investigation of indium antimonide in a magnetic field, b. investigation of gallium arsenide andor indium arsenide in a magnetic field, c. investigation of germanium and its behavior under stress, and d. fabrication of experimental and breadboard model detectors. Apparatus for comparing the photosensitivity of indium antimonide at wavelengths of 0.1 and 4 millimeters has been assembled and measurements are in progress. Work on the other semiconductor materials has been comfined to instrumentation problems and the acquisition of suitable samples of the materials for future measurements. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE