Accession Number:

AD0422536

Title:

PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25 C.

Descriptive Note:

Quarterly rept. no. 4, 1 Feb-30 Apr 63.

Corporate Author:

MOTOROLA INC PHOENIX ARIZ

Personal Author(s):

Report Date:

1963-04-30

Pagination or Media Count:

20.0

Abstract:

Progress is reported on an important advancement under the Epitaxial Starting Material process. It is the Cause and Elimination of Phantom p Layers. Under Reliability Engineering, the acceleration factor experiment and the allaluminum system devices are covered. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE