PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25 C.
Quarterly rept. no. 4, 1 Feb-30 Apr 63.
MOTOROLA INC PHOENIX ARIZ
Pagination or Media Count:
Progress is reported on an important advancement under the Epitaxial Starting Material process. It is the Cause and Elimination of Phantom p Layers. Under Reliability Engineering, the acceleration factor experiment and the allaluminum system devices are covered. Author