HIGH SPEED POWER AMPLIFIER USING ELECTRON BEAM SWITCHED P-N JUNCTIONS.
Interim development rept., 26 June-26 Sep 63.
TUNG-SOL ELECTRIC INC BLOOMFIELD N J
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A design theory was developed for the diode. It indicates the possibility of fabricating devices having a gain close to the maximum of 4700. The predicted steady-state I-V characteristics of the device permit calculation of some physical quantities which cannot be measured otherwise. Approximate calculations indicate that all transient processes are associated with times in the order of 10 to the -10 power seconds. High transconductance, low cut off, high beam current electron guns were designed for this project. Author