Accession Number:

AD0422511

Title:

INFRARED AND VISIBLE LIGHT EMISSION FROM FORWARDBIASED P-N JUNCTIONS,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1963-01-01

Pagination or Media Count:

10.0

Abstract:

Efforts were directed toward semiconductor diode light sources and semiconductor diode optical masers lasers which are the first practical devices in a new field for semiconductor devices that involves the efficient conversion of electrical energy into infrared and visible light. In the first part of this paper GaAs diodes will be described which produce incoherent infrared radiation with high efficiency as originally announced by Keyes and Quist. Incoherent radiation, radiation such as is obtained from light bulbs and from spark gap transmitters, has many disadvantages as compared to coherent radiation such as is now used in radio and radar. On the other hand, incoherent radiation can be used in many applications and I will describe below an experiment in which audio and video signals have been transmitted 30 miles on a beam of the incoherent infrared radiation emitted by a GaAs diode. Maser diodes will then be described GaAs diodes and InAs diodes which emit coherent infrared radiation, and GaAsxP1-x diodes which emit coherent visible radiation. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE