Accession Number:

AD0422357

Title:

EPITAXIAL CONTROL SYSTEM,

Descriptive Note:

Corporate Author:

MOTOROLA INC PHOENIX ARIZ

Personal Author(s):

Report Date:

1963-06-14

Pagination or Media Count:

21.0

Abstract:

Efforts were continued on the development of a system which will monitor the composition of the gas stream to an epitaxial growth reactor and a method for automatically controlling the constituent parts of the gas stream. The operation of the vapor analysis system, employing a small, highly sensitive mass spectrometer to analyze the components of the gas stream to a silicon epitaxial reactor, was much improved. The addition of a higher field strength sector field magnet has improved the spectrometer resolution. New electrometers have improved the response time and sensitivity of the system. It now appears feasible to directly monitor the growth and doping of silicon epitaxial layers of resistivities as high as one ohm-cm. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE