THE RESEARCH AND DEVELOPMENT OF HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
Quarterly progress rept. no. 5, 1 July-30 Sep 63.
GENERAL ELECTRIC CO AUBURN N Y
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This report covers work performed on highcurrent and high-voltage silicon controlled rectifier Device C of this contract. Process optimization of voltage, current and speed, and the approach to various problems concerning fabrication of Device C are discussed. Test data obtained on representative samples fabricated during this period of develo7ment are included herein. Author