Accession Number:

AD0421878

Title:

NUCLEAR MAGNETIC RESONANCE STUDIES OF HIGHLY DEGENERATE P-TYPE SILICON,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA NY

Personal Author(s):

Report Date:

1963-06-01

Pagination or Media Count:

147.0

Abstract:

This thesis reports the experimental investigation of highly degenerate p-type silicon using the techniques of nuclear magnetic resonance, and the interpretation of the results in the light of nuclear relaxation theories and a reasonable physical model. Silicon samples were examined in the concentration range from 10 to the 18th power to 10 to the 20th power boron impuritiescc and in the temperature range from 1.4 to 300 K. The parameters measured are the spinlattice relaxation time, the spin-spin relaxation time, and the resonance line shift. In addition, electron spin resonance spectra were observed for the same samples to aid in the determination of impurity content other than boron. The wealth of experimental Hall coefficient and resistivity data, in particular the results of Carlson, on the same samples, has been freely used. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE