Accession Number:

AD0420958

Title:

INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Descriptive Note:

Quarterly progress rept. no. 1, 1 Feb-30 Apr 63,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y

Personal Author(s):

Report Date:

1963-04-30

Pagination or Media Count:

8.0

Abstract:

Research concerns an investigation of transient radiation damage in semiconductor materials. Experiments will be performed relating to the transient radiation damage in silicon. More specifically specimens of silicon are to be exposed to short a few microseconds pulses of electrons with an energy of e.g. 40 MeV from the R.P.I. LINAC. The electrical properties of the specimens are to be measured during the time immediately following the pulse, e.g. during the first ten milliseconds. Initial estimates of the transient radiation damage effects show that we have to measure small signals that are preceded by very large signals. The outcome was a battery operated amplifier with three long-tailed pairs and a cascode cathode follower output stage. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE