GALLIUM ARSENIDE EPITAXIAL FILM GROWTH.
Interim technical documentary rept. no. 4, 15 June-15 Sep 63,
RADIO CORP OF AMERICA SOMERVILLE N J
Pagination or Media Count:
Excellent control over the doping level in n-type layers was achieved by using a doping gas mixture containing 0.0016 hydrogen sulfide in hydrogen. Carrier concentrations were proportional to flow rates of hydrogen sulfide within 2. Mobility measurements on the sulfur-doped layers disclosed a previously unreported dependence on the input sulfur concentration. Heat treatment at 1000C raised the carrier concentration of a layer above the maximum of 4 x 10 to the 18thcc and indicates that 10 to the 19th electronscc is attainable by this method. Comparison of the frequency of bumpiness and poor growth with the two vapor sources showed that in the last six months poor structure occured approximately 2 12 times less with HCl than with GaCl3. Concentrated effort is being made on 1 obtaining ultra-pure HCl and 2 gaining more complete understanding and control of the factors responsible for the quality of layer structure. Author