COMBINED ENVIRONMENTAL TESTING OF SEMICONDUCTOR DEVICES.
Final rept. 15 June-15 June 63.
BURROUGHS CORP PHILADELPHIA PA
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Efforts were directed to ascertain whether the combined environmental effects of temperature and pulsed nuclear gamma and neutron radiation on semiconductor devices are simply the sum of the two single effects or a complex interaction of the two. Transistors from four major device categories two silicon and two germanium were exposed at various statistically sampled temperatures to various statistically sampled intensities of radiation pulses. The resulting transient, long term, and permanent effects were recorded. The data was analyzed to determine the degree and modes of interaction of the different environmental effects. Collector-base leakage for each of the four devices increased during the radiation pulse and afterward returned to essentially its initial value. Magnitude of the peak leakage for silicon transistors was proportional to the square root of the absolute temperature. The germanium units showed little permanent damage while the silicon units suffered a 15 percent -25 percent permanent gain reduction at the highest flux level. Author