Accession Number:

AD0420652

Title:

INVESTIGATION AND DEVELOPMENT IN THE AREA OF EPITAXIAL GROWTH TECHNIQUES.

Descriptive Note:

Quarterly rept. no. 5, 1 May-31 July 63,

Corporate Author:

SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS

Report Date:

1961-06-01

Pagination or Media Count:

37.0

Abstract:

Process improvement has been continued in layer resistivity and thickness control for specific epitaxial layers with graded resistivity tailored for microelectronic integrated digital circuit application. An epitaxial furnace with a rotating susceptor and an internal RF coil was evaluated. A three point probe breakdown voltage technique was evaluated as a means for measuring layer resistivity. A stacking fault etch pit technique was introduced for the measurement of layer thickness. Structural imperfections such as dislocation, stacking faults, etc. in epitaxial layers were studied carefully to identify the sources for the growth of these imperfections. Engineering demonstration vehicle samples of a group of NANDNOR dual gate made by epitaxy-diffusion techniques is in preparation. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE