Accession Number:

AD0420462

Title:

LOW TEMPERATURE VAPOR GROWTH STUDIES,

Descriptive Note:

Corporate Author:

IBM WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y

Personal Author(s):

Report Date:

1963-07-01

Pagination or Media Count:

125.0

Abstract:

Studies have been initiated to explore the potential of utilizing chemical and physical perturbing influences to extend the temperature ranges of well known and novel vapor transport reactions, and to determine which parameters most affect deposition characteristics in epitaxial growth of semiconductors from the vapor. Germanium has been employed almost exclusively as a prototype material in the initial work. A series of extensive thermodynamic analyses of systems containing Ge andor Ga with H andor He and iodine have been completed. Based on these analyses, studies of transpiration conditions for iodine and germanium source beds in an inert carrier stream have been begun, and a disproportionation flow system using HI and hydrogen helium carrier gas mixtures has been designed, constructed and tested. The effects of physical perturbations such as U.V. light have been studied via spectroscopic techniques. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE