500 C SILICON CARBIDE RECTIFIER PROGRAM.
Interim technical progress rept. no. 8, 1 July30 Sep 63,
WESTINGHOUSE ELECTRIC CORP DAYTON OHIO
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Efforts were continued on the development of 500 degree C silicon carbide rectifiers. The growth rate of silicon carbide crystals prepared by the sublimation method was determined by measuring the amount of growth between successive, timed dopant additions. This was compared with the growth rate as obtained from a simple model. All values agree within a factor of five. The use of molten borax as an etchant for silicon carbide was studies. Due to its relatively slow etch rate about 30 times slower than a molten sodium peroxide-sodium hydroxide mixture a much finer control of the etching is possible. Details are given on the life and storage tests which were successfully passed by two silicon carbide rectifiers. An open tube-flowing gas system was shown suitable for the surface passivation of groups of silicon carbide rectifiers. Author