Accession Number:

AD0420369

Title:

STUDY ON A DEFINITIVE CONFIRMATION OF THERMAL INSTABILITY IN SILICON POWER TRANSISTORS.

Descriptive Note:

Final rept.,

Corporate Author:

SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF

Personal Author(s):

Report Date:

1963-09-01

Pagination or Media Count:

48.0

Abstract:

Supplemental theoretical and experimental studies are presented which concern the problem of lateral thermal instability in silicon power transistors. Resistances introduced into the transistor structure are shown to stabilize by suppressing the formation of hot spots. The stability index can be obtained by impedance measurements. Deliberately introduced inhomogeneities cause preferential formation of the thermal instability. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE