STUDY ON A DEFINITIVE CONFIRMATION OF THERMAL INSTABILITY IN SILICON POWER TRANSISTORS.
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
Pagination or Media Count:
Supplemental theoretical and experimental studies are presented which concern the problem of lateral thermal instability in silicon power transistors. Resistances introduced into the transistor structure are shown to stabilize by suppressing the formation of hot spots. The stability index can be obtained by impedance measurements. Deliberately introduced inhomogeneities cause preferential formation of the thermal instability. Author