Accession Number:

AD0420097

Title:

MATERIAL PROCESSING AND PHENOMENA INVESTIGATION OF FUNCTIONAL ELECTRONIC BLOCKS.

Descriptive Note:

Quarterly progress rept. no. 4, 1 Jun-31 Aug 63.

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

Report Date:

1963-08-31

Pagination or Media Count:

1.0

Abstract:

Contents High Resistivity GaAs Substrates-epitaxial GaAs from GaAs feed material, epitaxial GaAs from elemental gallium and arsenic, deposition of doped epitaxial GaAs, Anomalous layer in GaAs epitaxial deposition, epitaxial silicon deposition on GaAs, masking and diffusion for multiple device formation Three Dimensional Arrays--epitaxial deposition of high resistivity GaAs, Interconnections Photoeffects--materials and general technology, contacts, functional electronic block studies, GaAsP and GaP Epitaxial Devices.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE