Accession Number:

AD0420058

Title:

INVESTIGATIONS OF FUNDAMENTAL LIMITATIONS DETERMINING THE ULTIMATE SIZE OF MICROSTRUCTURES. THE TOPOGRAPHY AND GROWTH MECHANISM OF SILICON OVERGROWTHS,

Descriptive Note:

Corporate Author:

RCA LABS PRINCETON N J

Personal Author(s):

Report Date:

1963-06-30

Pagination or Media Count:

15.0

Abstract:

Silicon films have been grown by chemical reaction on 111 silicon substrates. The surfaces were examined by various microscopic and interferometric methods. Surface structures are classified into two groups depending on whether the angles between the bounding planes and the 111 surface are small less than 3 degrees or large greater than 10 degrees. A layer growth mechanism is postulated to explain the topography and the influence of growth parameters. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE