PRODUCTION ENGINEERING MEASURE TO INVESTIGATE PROPERTIES OF INDIUM ANTIMONIDE AND TO PROVIDE 801-C6 INFRARED DETECTORS.
Quarterly progress rept. no. 2, 27 Mar-27 June 63,
TEXAS INSTRUMENTS INC DALLAS
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The responsivity of indium antimonide doped with germanium has been increased. Material prepara tion is of prime importance, as is the handling of this material after preparation to avoid stresses and resulting dislocations and fractures. Accurate Hall data on high resistivity p-type material was difficult to acquire. Different techniques have been used to gain better correla tion. Measured device reces do not agree with calculated resistances, and improved predic tion methods are being studied. Electrolytic etching of wafers increases response, lowers noise and decreases carrier recombination at the surface. Author