Accession Number:

AD0419328

Title:

RESEARCH AND DEVELOPMENT EPITAXIAL OVERGROWTH STRUCTURES IN SILICON

Descriptive Note:

Quarterly progress rept. no. 3, 15 Oct 1962 - 14 Jan 1963

Corporate Author:

PHILCO CORP LANSDALE PA

Personal Author(s):

• Schnable, G.

Report Date:

1963-01-14

Pagination or Media Count:

49.0

Abstract:

Details are provided on the work performed in meeting the third quarter goal of preparation and delivery of 1 Structures prepared by oxide masking of selected areas during deposition of epitaxial silicon, 2 Structures prepared by oxide masking of selected areas during HCl etching, 3 Structures made by preferential growth of epitaxial silicon through holes in an oxide mask to form a transistor base followed by reoxidation and a second preferential growth to form emitters. A brief review of oxidation and growth techniques is presented. Evaluation results are given for some specific structures produced.

Descriptors:

• *SILICON
• OXIDATION
• OXIDES
• ETCHED CRYSTALS
• SILICON COMPOUNDS
• TRANSISTORS
• DIOXIDES
• FEASIBILITY STUDIES

Subject Categories:

• Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE