RESEARCH AND DEVELOPMENT EPITAXIAL OVERGROWTH STRUCTURES IN SILICON
Quarterly progress rept. no. 3, 15 Oct 1962 - 14 Jan 1963
PHILCO CORP LANSDALE PA
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Details are provided on the work performed in meeting the third quarter goal of preparation and delivery of 1 Structures prepared by oxide masking of selected areas during deposition of epitaxial silicon, 2 Structures prepared by oxide masking of selected areas during HCl etching, 3 Structures made by preferential growth of epitaxial silicon through holes in an oxide mask to form a transistor base followed by reoxidation and a second preferential growth to form emitters. A brief review of oxidation and growth techniques is presented. Evaluation results are given for some specific structures produced.
- Inorganic Chemistry