INTEGRATED LOGIC NETS
RCA LABS PRINCETON NJ
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This report describes a device possessing a significant departure from the conventional unipolar transistor in that the reverse-biased p-n junction has been superseded by a metal-oxide semiconductor MOS control structure. A simple model is proposed and the basic transistor current-voltage relationships are derived for a thick oxide and shallow conducting channel. A more detailed model is than proposed to explain some observed anomalies. The usual approximation of constant current in the saturation region is abandoned and the behavior of the drain resistance is considered. Relations predicting and describing this behavior are closely analogous to similar relations for vacuum tubes. Experimental data from units to which this model may be applied have shown close agreement with the theoretical predictions. The yield of units fabricated to date has averaged over 95, on recently fabricated wafers, indicating great promise for integrated electronics applications.
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